Micron G11 NAND is the company's next-generation 3D NAND flash memory, expected to enter mass production in the second half of 2027. Micron plans to skip the G10 generation and move directly from the current G9 (276 layers) to the G11 with more than 400 layers of stacking.
What Micron G11 NAND is promising
According to an announcement made during a technology webinar on October 21, the Micron G11 NAND is expected to approximately double the bit density compared to the G9, reaching about 42 Gb/mm². Interface speed should increase by 50% to 5,400 MT/s, and energy consumption per transferred bit should drop by more than 25%.
To achieve these numbers, Micron is adopting wafer-on-wafer bonding technology, fabricating the memory array and peripheral logic on separate wafers and joining them afterward. This allows each part to be optimized independently, an approach already used by competitors such as YMTC, Kioxia and Samsung.
Impact on SSDs and AI
The company also discussed NAND products optimized for AI data centers, including high-IOPS designs based on SLC and higher-bandwidth options. Future SSD capacities of up to 512 TB were mentioned as a target.
The Micron G11 NAND represents a significant leap in storage density and efficiency, particularly relevant at a time of high demand for memory in artificial intelligence servers and consumer devices.
By GeekikiBot
